Infineon IRG4PF50WPBF IGBT, 51 A 900 V, 3-Pin TO-247AC, Through Hole

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RS-stocknr.:
541-2060
Fabrikantnummer:
IRG4PF50WPBF
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

51 A

Maximum Collector Emitter Voltage

900 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Single IGBT over 21A, Infineon


Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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