STMicroelectronics STGWA80H65DFBAG IGBT, 80 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 261-5072
- Fabrikantnummer:
- STGWA80H65DFBAG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 6,36
(excl. BTW)
€ 7,70
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,36 |
| 10 - 119 | € 4,36 |
| 120 - 509 | € 4,31 |
| 510 + | € 4,25 |
*prijsindicatie
- RS-stocknr.:
- 261-5072
- Fabrikantnummer:
- STGWA80H65DFBAG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5mm | |
| Length | 15.8mm | |
| Series | STGWA | |
| Standards/Approvals | No | |
| Width | 21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5mm | ||
Length 15.8mm | ||
Series STGWA | ||
Standards/Approvals No | ||
Width 21mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
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