Bourns BIDW20N60T IGBT, 40 A 600 V TO-247
- RS-stocknr.:
- 253-3504
- Fabrikantnummer:
- BIDW20N60T
- Fabrikant:
- Bourns
Subtotaal (1 tube van 600 eenheden)*
€ 1.478,40
(excl. BTW)
€ 1.788,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 1.800 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 600 + | € 2,464 | € 1.478,40 |
*prijsindicatie
- RS-stocknr.:
- 253-3504
- Fabrikantnummer:
- BIDW20N60T
- Fabrikant:
- Bourns
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Bourns | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 192W | |
| Package Type | TO-247 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | BIDW20N60T | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Bourns | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 192W | ||
Package Type TO-247 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series BIDW20N60T | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.
600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant
Gerelateerde Links
- Bourns BIDW20N60T IGBT, 40 A 600 V TO-247
- Bourns BIDNW30N60H3 IGBT, 30 A 600 V TO-247
- Bourns BIDW30N60T IGBT, 60 A 600 V, 3-Pin TO-247
- Infineon IGW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- Bourns BIDW50N65T IGBT, 100 A 650 V TO-247
- Infineon IGW40N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin PG-TO-247, Through Hole
- Infineon IGW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin PG-TO-247, Through Hole
- Infineon IKW20N60H3FKSA1, N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole