onsemi NXH300B100H4Q2F2SG IGBT Module, 73 A 1000 V 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST -
- RS-stocknr.:
- 245-6970
- Fabrikantnummer:
- NXH300B100H4Q2F2SG
- Fabrikant:
- onsemi
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 245-6970
- Fabrikantnummer:
- NXH300B100H4Q2F2SG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 73 A | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 79 W | |
| Number of Transistors | 6 | |
| Package Type | 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 73 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 79 W | ||
Number of Transistors 6 | ||
Package Type 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | ||
The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.
Extremely Efficient Trench with Field Stop Technology
Low Switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free devices
Low Switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free devices
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