Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1.2 kV

RS-stocknr.:: 244-5825
Fabrikantnummer:: FF300R12KT4HOSA1
Fabrikant:: Infineon

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1.2 kV

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€ 180,77

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€ 218,73

(incl. BTW)

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Verzending vanaf 31 mei 2027

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Aantal stuks	Per stuk
1 - 1	€ 180,77
2 - 4	€ 177,14
5 +	€ 159,42

*prijsindicatie

RS-stocknr.:: 244-5825
Fabrikantnummer:: FF300R12KT4HOSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	450A
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Number of Transistors	2
	Maximum Power Dissipation Pd	1600W
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Operating Temperature	175°C
	Series	FF
	Width	61.4mm
	Standards/Approvals	No
	Length	106.4mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 450A
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Number of Transistors 2
	Maximum Power Dissipation Pd 1600W
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Operating Temperature 175°C
	Series FF
	Width 61.4mm
	Standards/Approvals No
	Length 106.4mm
	Automotive Standard No

Datasheet - FF300R12KT4HOSA1

Infineon Series FF IGBT Module, 1200V Collector-Emitter Voltage, 450A Collector Current - FF300R12KT4HOSA1

This IGBT module is a power semiconductor device designed to switch and control high-voltage DC circuits in industrial power systems. It combines two transistors in a single package to handle high current loads and operates across a wide temperature range suitable for demanding thermal environments.

Features and Benefits:

• 1200V blocking capability for high-voltage switching applications
• 450A continuous collector current to support heavy current demands
• 1600W maximum power dissipation for sustained high-power operation
• 2.15V low Vce(sat) for reduced conduction losses
• 20V maximum gate-emitter rating to define safe drive limits
• Operates up to 175°C for elevated-temperature installations

Applications

• Suitable for high-voltage motor drive systems
• Ideal for industrial inverters requiring high current
• Can be used for renewable-energy converter stages
• Used with power supplies needing Compact dual transistors
• Applicable in traction or utility power-electronics environments

What transistor configuration does it provide?

It contains two matched transistors in a single module allowing synchronous or complementary switching arrangements.

What environmental extremes can it withstand?

It is rated to function down to -40°C and up to 175°C for operation across wide temperature ranges.

How does the gate-emitter limitation affect drive circuitry?

The 20V gate-emitter limit defines the maximum allowable gate-drive voltage and determines required gate-drive protection and level-shifting design.

What electrical stress limits should designers observe?

Designers must account for a 1200V collector-emitter blocking limit and a 1600W package dissipation ceiling when planning thermal management.