STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads
- RS-stocknr.:
- 244-3194
- Fabrikantnummer:
- STGYA50H120DF2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 187,89
(excl. BTW)
€ 227,34
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 270 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 6,263 | € 187,89 |
| 60 + | € 5,95 | € 178,50 |
*prijsindicatie
- RS-stocknr.:
- 244-3194
- Fabrikantnummer:
- STGYA50H120DF2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 535 W | |
| Configuration | Series | |
| Package Type | Max247 long leads | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 535 W | ||
Configuration Series | ||
Package Type Max247 long leads | ||
The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
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