Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- RS-stocknr.:
- 232-6736
- Fabrikantnummer:
- IKWH30N65WR5XKSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,26
(excl. BTW)
€ 2,74
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 118 stuk(s) vanaf 18 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 1,13 | € 2,26 |
*prijsindicatie
- RS-stocknr.:
- 232-6736
- Fabrikantnummer:
- IKWH30N65WR5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 95 W | |
| Package Type | TO-247-3-HCC | |
| Configuration | Single | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 95 W | ||
Package Type TO-247-3-HCC | ||
Configuration Single | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR5 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creep age distances.
Monolithically integrated diode
Stable temperature behaviour
Improved reliability against package contamination
Stable temperature behaviour
Improved reliability against package contamination
Gerelateerde Links
- Infineon IKWH30N65WR5XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH30N65WR6XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH40N65WR6XKSA1 Single IGBT, 40 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH70N65WR6XKSA1 Single IGBT, 70 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH60N65WR6XKSA1 Single IGBT, 60 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH50N65WR6XKSA1 Single IGBT, 50 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH20N65WR6XKSA1 Single IGBT, 20 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- Infineon IGW75N65H5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247