Infineon FP75R12N2T7BPSA1, Type N-Channel IGBT, 75 A 1.2 kV, 31-Pin Module, Through Hole
- RS-stocknr.:
- 232-6719
- Fabrikantnummer:
- FP75R12N2T7BPSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 154,91
(excl. BTW)
€ 187,44
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 154,91 |
| 10 - 19 | € 151,81 |
| 20 - 29 | € 148,73 |
| 30 - 39 | € 145,79 |
| 40 + | € 142,84 |
*prijsindicatie
- RS-stocknr.:
- 232-6719
- Fabrikantnummer:
- FP75R12N2T7BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | Module | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Operating Temperature | 175°C | |
| Width | 45 mm | |
| Series | FP75R12N2T7 | |
| Standards/Approvals | No | |
| Length | 107.5mm | |
| Height | 21.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type Module | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Operating Temperature 175°C | ||
Width 45 mm | ||
Series FP75R12N2T7 | ||
Standards/Approvals No | ||
Length 107.5mm | ||
Height 21.3mm | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 75 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Also available with PressFIT technology. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
Gerelateerde Links
- Infineon, Type N-Channel IGBT, 75 A 1.2 kV, 31-Pin Module, Through Hole
- Infineon, Type N-Channel IGBT Module, 75 A 1.2 kV, 35-Pin ECONO3, Through Hole
- Infineon FS75R12KE3GBOSA1, Type N-Channel IGBT Module, 75 A 1.2 kV, 35-Pin ECONO3, Through Hole
- Infineon, Type N-Channel IGBT, 75 A 1200 V, 31-Pin Module, Chassis
- Infineon, Type N-Channel IGBT Module, 400 A 1.2 kV, 5-Pin 62 mm Module, Surface
- Infineon, Type N-Channel IGBT Module, 295 A 1.2 kV, 7-Pin 62 mm Module, Surface
- Infineon FP75R12N2T7B11BPSA1, Type N-Channel IGBT, 75 A 1200 V, 31-Pin Module, Chassis
- Infineon FZ400R12KE3HOSA1, Type N-Channel IGBT Module, 400 A 1.2 kV, 5-Pin 62 mm Module, Surface
