Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO3, PCB Mount
- RS-stocknr.:
- 838-6923
- Fabrikantnummer:
- FS75R12KE3GBOSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 119,96
(excl. BTW)
€ 145,15
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 119,96 |
| 2 - 4 | € 113,96 |
| 5 + | € 109,16 |
*prijsindicatie
- RS-stocknr.:
- 838-6923
- Fabrikantnummer:
- FS75R12KE3GBOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 355 W | |
| Configuration | 3 Phase Bridge | |
| Package Type | ECONO3 | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 35 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Maximum Operating Temperature | +125 °C | |
| Minimum Operating Temperature | -40 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 355 W | ||
Configuration 3 Phase Bridge | ||
Package Type ECONO3 | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 35 | ||
Switching Speed 1MHz | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Maximum Operating Temperature +125 °C | ||
Minimum Operating Temperature -40 °C | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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