Infineon, Type N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 226-6077
- Fabrikantnummer:
- IHW30N120R5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 53,64
(excl. BTW)
€ 64,89
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- Plus verzending 90 stuk(s) vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 1,788 | € 53,64 |
| 60 - 120 | € 1,699 | € 50,97 |
| 150 - 270 | € 1,627 | € 48,81 |
| 300 - 570 | € 1,556 | € 46,68 |
| 600 + | € 1,448 | € 43,44 |
*prijsindicatie
- RS-stocknr.:
- 226-6077
- Fabrikantnummer:
- IHW30N120R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Length | 42mm | |
| Standards/Approvals | RoHS | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Length 42mm | ||
Standards/Approvals RoHS | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IHW30N120R5 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.
Very tight parameter distribution
Low EMI
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