Infineon IHW30N120R5XKSA1, N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 226-6077
Fabrikantnummer:: IHW30N120R5XKSA1
Fabrikant:: Infineon

Infineon IHW30N120R5XKSA1, N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 30 eenheden)*

€ 77,37

(excl. BTW)

€ 93,63

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per tube*
30 - 30	€ 2,579	€ 77,37
60 - 120	€ 2,45	€ 73,50
150 - 270	€ 2,347	€ 70,41
300 - 570	€ 2,244	€ 67,32
600 +	€ 2,089	€ 62,67

*prijsindicatie

RS-stocknr.:: 226-6077
Fabrikantnummer:: IHW30N120R5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic	60A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	330W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	25 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.55V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	16.13mm
	Series	Resonant Switching
	Height	5.21mm
	Length	42mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic 60A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 330W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 25 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.55V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 16.13mm
	Series Resonant Switching
	Height 5.21mm
	Length 42mm
	Automotive Standard No

Datasheet - IHW30N120R5XKSA1

Infineon Resonant Switching Series IGBT Single Transistor IC, 1200V Max Collector Emitter Voltage, 60A Max Continuous Collector Current - IHW30N120R5XKSA1

This IGBT single-transistor IC is a three-pin, through-hole power transistor designed for high-voltage switching in resonant converter topologies. It operates across an extended temperature range and is suited to demanding industrial environments where high collector‑emitter voltage and substantial continuous current are required.

Features and Benefits:

• 1200 V collector‑emitter rating enables high-voltage switching capability
• 60 A continuous collector current supports heavy conduction loads
• 1.55 V VCE(sat) delivers low conduction losses during on‑state
• 330 W maximum power dissipation allows high-power handling
• 25 V gate‑emitter maximum protects gate against overdrive

Applications

• Suitable for resonant converter power stages in industrial systems
• Ideal for high-voltage power supplies requiring 1200 V devices
• Used for switch modules needing 60 A continuous capability
• Can be used in thermally stressed environments up to 175 °C
• Suitable for through‑hole assemblies and serviceable power boards

What gate protection limits should be observed?

Keep gate‑emitter excursions within ±25 V to prevent gate breakdown.

How does thermal range affect installation choices?

The device functions from −40 °C to 175 °C so heat‑sinking and airflow must match the upper temperature to maintain safe junction temperatures.

What mounting method is required for reliable operation?

Through‑hole mounting into a PCB or insulated heat‑sink mounting ensures mechanical stability and thermal conduction.

What package and pin count does it provide for board layout?

It is supplied in a TO‑247 package with three pins for standard power board footprints.