Infineon IKY40N120CS6XKSA1, Type N-Channel IGBT Single Transistor IC, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 226-6120
- Fabrikantnummer:
- IKY40N120CS6XKSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 5,89
(excl. BTW)
€ 7,13
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
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- Plus verzending 226 stuk(s) vanaf 30 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 5,89 |
*prijsindicatie
- RS-stocknr.:
- 226-6120
- Fabrikantnummer:
- IKY40N120CS6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 5kW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 41.2mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 5kW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 41.2mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The Infineon 40 A IGBT with anti-parallel diode is very soft, fast recovery anti-parallel diode and has high ruggedness, temperature stable behaviour. It used low gate charge.
Low EMI
Low Gate Charge QG
Low saturation voltage if 1.85 V combined with low switching losses
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