Infineon FF1500R12IE5BPSA1 Dual IGBT Module, 1.5 kA 1200 V, 10-Pin PRIME3+
- RS-stocknr.:
- 218-4322
- Fabrikantnummer:
- FF1500R12IE5BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 2 eenheden)*
€ 1.189,83
(excl. BTW)
€ 1.439,694
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 2 + | € 594,915 | € 1.189,83 |
*prijsindicatie
- RS-stocknr.:
- 218-4322
- Fabrikantnummer:
- FF1500R12IE5BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 1.5 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
| Configuration | Dual | |
| Package Type | PRIME3+ | |
| Channel Type | N | |
| Pin Count | 10 | |
| Transistor Configuration | Dual | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 1.5 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
Configuration Dual | ||
Package Type PRIME3+ | ||
Channel Type N | ||
Pin Count 10 | ||
Transistor Configuration Dual | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1200 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
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