Infineon FF1500R17IP5BPSA1 Dual IGBT Module, 1.5 kA 1700 V, 10-Pin PRIME3+
- RS-stocknr.:
- 218-4325
- Fabrikantnummer:
- FF1500R17IP5BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 2 eenheden)*
€ 1.268,49
(excl. BTW)
€ 1.534,872
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2 stuk(s) vanaf 17 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 2 + | € 634,245 | € 1.268,49 |
*prijsindicatie
- RS-stocknr.:
- 218-4325
- Fabrikantnummer:
- FF1500R17IP5BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 1.5 kA | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Package Type | PRIME3+ | |
| Configuration | Dual | |
| Channel Type | N | |
| Pin Count | 10 | |
| Transistor Configuration | Dual | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 1.5 kA | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
Package Type PRIME3+ | ||
Configuration Dual | ||
Channel Type N | ||
Pin Count 10 | ||
Transistor Configuration Dual | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1700 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for motor control and drives, power converter and inverter for wind turbines, power transmission and distribution, traction and etc.
Low switching losses
High current density
High creepage and clearance distances
High power and thermal cycling capability
High current density
High creepage and clearance distances
High power and thermal cycling capability
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