Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6673
- Artikelnummer Distrelec:
- 304-31-965
- Fabrikantnummer:
- IKW30N65H5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,16
(excl. BTW)
€ 20,765
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 3,432 | € 17,16 |
| 10 - 20 | € 3,092 | € 15,46 |
| 25 - 45 | € 2,882 | € 14,41 |
| 50 - 120 | € 2,676 | € 13,38 |
| 125 + | € 2,472 | € 12,36 |
*prijsindicatie
- RS-stocknr.:
- 215-6673
- Artikelnummer Distrelec:
- 304-31-965
- Fabrikantnummer:
- IKW30N65H5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 55A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 42mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 55A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 42mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Gerelateerde Links
- Infineon, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 70 A 650 V, 3-Pin TO-247, Screw
- Infineon IKWH70N65WR6XKSA1, Type N-Channel IGBT, 70 A 650 V, 3-Pin TO-247, Screw
- Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- Infineon, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole