Infineon AIGW50N65F5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3
- RS-stocknr.:
- 215-6611
- Fabrikantnummer:
- AIGW50N65F5XKSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 215-6611
- Fabrikantnummer:
- AIGW50N65F5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 270 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 270 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon three pin high speed fast insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Gerelateerde Links
- Infineon AIGW50N65F5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3
- Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3
- Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247
- Infineon IKW40N65ET7XKSA1 IGBT 650 V PG-TO247-3