STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 206-7211
- Fabrikantnummer:
- STGWA75H65DFB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 106,23
(excl. BTW)
€ 128,55
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 3,541 | € 106,23 |
| 120 - 240 | € 3,445 | € 103,35 |
| 270 - 480 | € 3,353 | € 100,59 |
| 510 - 990 | € 3,268 | € 98,04 |
| 1020 + | € 3,187 | € 95,61 |
*prijsindicatie
- RS-stocknr.:
- 206-7211
- Fabrikantnummer:
- STGWA75H65DFB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 115 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 357 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 115 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 357 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
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