STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP
- RS-stocknr.:
- 204-9871
- Fabrikantnummer:
- STGF20H65DFB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 66,20
(excl. BTW)
€ 80,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,324 | € 66,20 |
| 100 - 200 | € 1,288 | € 64,40 |
| 250 - 450 | € 1,253 | € 62,65 |
| 500 - 950 | € 1,222 | € 61,10 |
| 1000 + | € 1,191 | € 59,55 |
*prijsindicatie
- RS-stocknr.:
- 204-9871
- Fabrikantnummer:
- STGF20H65DFB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 45 W | |
| Package Type | TO-220FP | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 45 W | ||
Package Type TO-220FP | ||
Pin Count 3 | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
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