STMicroelectronics STGF10NB60SD, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole
- RS-stocknr.:
- 877-2873
- Fabrikantnummer:
- STGF10NB60SD
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 11,58
(excl. BTW)
€ 14,01
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 70 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,158 | € 11,58 |
| 50 - 90 | € 1,144 | € 11,44 |
| 100 - 240 | € 1,129 | € 11,29 |
| 250 - 490 | € 1,116 | € 11,16 |
| 500 + | € 1,103 | € 11,03 |
*prijsindicatie
- RS-stocknr.:
- 877-2873
- Fabrikantnummer:
- STGF10NB60SD
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 29A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 80W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 3.8μs | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | Low Drop | |
| Standards/Approvals | RoHS | |
| Length | 30.6mm | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| Energy Rating | 8mJ | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 29A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 80W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 3.8μs | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Series Low Drop | ||
Standards/Approvals RoHS | ||
Length 30.6mm | ||
Height 10.4mm | ||
Automotive Standard No | ||
Energy Rating 8mJ | ||
- Land van herkomst:
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- STMicroelectronics, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole
- STMicroelectronics, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF7NB60SL, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF6NC60HD, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
- STMicroelectronics, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole
- Infineon, Type N-Channel IGBT Module, 29 A 600 V, 22-Pin EASY1B, Clamp
- Infineon FP20R06W1E3B11BOMA1, Type N-Channel IGBT Module, 29 A 600 V, 22-Pin EASY1B, Clamp