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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	186 W
	Configuration	Dual
	Package Type	Q0BOOST
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	22
	Transistor Configuration	Dual
	Dimensions	66.2 x 32.8 x 11.9mm
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-40 °C

	Alles selecteren
	Merk onsemi
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 186 W
	Configuration Dual
	Package Type Q0BOOST
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 22
	Transistor Configuration Dual
	Dimensions 66.2 x 32.8 x 11.9mm
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -40 °C

Datasheet NXH100B120H3Q0STG

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage

onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

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