STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 168-8940
- Fabrikantnummer:
- STGP5H60DF
- Fabrikant:
- STMicroelectronics
50 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een tube 50)
€ 1,128
(excl. BTW)
€ 1,365
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 50 - 50 | € 1,128 | € 56,40 |
| 100 - 200 | € 1,071 | € 53,55 |
| 250 - 450 | € 1,015 | € 50,75 |
| 500 - 700 | € 0,958 | € 47,90 |
| 750 + | € 0,902 | € 45,10 |
| *prijsindicatie | ||
- RS-stocknr.:
- 168-8940
- Fabrikantnummer:
- STGP5H60DF
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 88 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 15.75mm |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 855pF |
| Energy Rating | 221mJ |
| Maximum Operating Temperature | +175 °C |