IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- RS-stocknr.:
- 168-4582
- Fabrikantnummer:
- IXGN320N60A3
- Fabrikant:
- IXYS
Subtotaal (1 tube van 10 eenheden)*
€ 363,51
(excl. BTW)
€ 439,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 10 stuk(s) vanaf 22 december 2025
- Plus verzending 300 stuk(s) vanaf 14 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 10 + | € 36,351 | € 363,51 |
*prijsindicatie
- RS-stocknr.:
- 168-4582
- Fabrikantnummer:
- IXGN320N60A3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current | 320 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 735 W | |
| Package Type | SOT-227B | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 5kHz | |
| Transistor Configuration | Common Emitter | |
| Dimensions | 38.23 x 25.07 x 9.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current 320 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 735 W | ||
Package Type SOT-227B | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 5kHz | ||
Transistor Configuration Common Emitter | ||
Dimensions 38.23 x 25.07 x 9.6mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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