IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5
- RS-stocknr.:
- 168-4497
- Fabrikantnummer:
- MDI75-12A3
- Fabrikant:
- IXYS
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 168-4497
- Fabrikantnummer:
- MDI75-12A3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | IGBT Module | |
| Package Type | Y4-M5 | |
| Configuration | Single | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 30mm | |
| Length | 94mm | |
| Width | 34 mm | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type IGBT Module | ||
Package Type Y4-M5 | ||
Configuration Single | ||
Channel Type Type N | ||
Pin Count 7 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 30mm | ||
Length 94mm | ||
Width 34 mm | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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