IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 146-1729
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
Subtotaal (1 tube van 60 eenheden)*
€ 479,70
(excl. BTW)
€ 580,44
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 14 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 60 + | € 7,995 | € 479,70 |
*prijsindicatie
- RS-stocknr.:
- 146-1729
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current | 280 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 300 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current 280 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 300 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXYH50N120C3 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXYH40N120C3 IGBT, 70 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole