IXYS IXYH30N120C3D1, Type N-Channel high Speed IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 808-0271
- Artikelnummer Distrelec:
- 302-53-444
- Fabrikantnummer:
- IXYH30N120C3D1
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,29
(excl. BTW)
€ 10,03
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Plus verzending 155 stuk(s) vanaf 23 februari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,29 |
| 10 - 19 | € 7,45 |
| 20 - 49 | € 7,09 |
| 50 - 249 | € 6,23 |
| 250 + | € 5,58 |
*prijsindicatie
- RS-stocknr.:
- 808-0271
- Artikelnummer Distrelec:
- 302-53-444
- Fabrikantnummer:
- IXYH30N120C3D1
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current Ic | 66A | |
| Product Type | high Speed IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 416W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 16.26 mm | |
| Standards/Approvals | International Standard Package | |
| Series | GenX3TM | |
| Length | 20.32mm | |
| Automotive Standard | No | |
| Energy Rating | 400mJ | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current Ic 66A | ||
Product Type high Speed IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 416W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Width 16.26 mm | ||
Standards/Approvals International Standard Package | ||
Series GenX3TM | ||
Length 20.32mm | ||
Automotive Standard No | ||
Energy Rating 400mJ | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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