Infineon IKZA75N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,

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RS-stocknr.:
284-628
Fabrikantnummer:
IKZA75N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

338 W

Number of Transistors

1

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-4-STD-NT3.7

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT is a high performance power component designed to meet the rigorous demands of contemporary power applications. It features the advanced TRENCHSTOP IGBT7 technology, providing a remarkable balance of high speed operation and low saturation voltage. This innovative device ensures efficient energy management and enhanced thermal performance, making it ideal for industrial applications such as uninterruptible power supplies, electric vehicle charging systems, and string inverters. With robust reliability and comprehensive product validation, it stands as a reliable choice for engineers focused on optimising performance in challenging electronic environments.

High speed operation minimizes switching losses
Low collector emitter saturation enhances power efficiency
Humidity resistant design ensures reliability
Robust thermal management supports high current
Optimized for hard switching multi level applications
Comprehensive PSpice models for easy integration
Soft and fast recovery diode enables smooth performance
Qualified for industrial use per JEDEC standards

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