Infineon IKZA40N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,

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RS-stocknr.:
284-616
Fabrikantnummer:
IKZA40N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

210 W

Package Type

PG-TO247-4-STD-NT3.7

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT is designed to deliver high performance with a low saturation voltage, utilising the latest TRENCHSTOP technology. By integrating high speed capabilities with rugged characteristics, this product stands out in various applications, from industrial uninterruptible power supplies to electric vehicle charging systems. The device operates efficiently at a collector emitter voltage of 650 V and can handle high current levels, making it ideal for demanding conditions. Its capabilities are further enhanced with a very soft, fast recovery diode, ensuring smooth operation. Aimed at engineers and technicians, the product is built to last, boasting moisture resistance and compliance with rigorous industrial standards.

Optimised for hard switching applications
Excellent humidity robustness for reliability
Low saturation voltage enhances efficiency
Fast recovery diode for smooth switching
Qualified for industrial use standards
Complete spectrum with PSpice models

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