Infineon MOSFET Gate Driver 6, 165 mA 28-Pin 17.5 V, DSO
- RS-stocknr.:
- 226-6046
- Fabrikantnummer:
- 6EDL04N06PTXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 1.267,00
(excl. BTW)
€ 1.533,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,267 | € 1.267,00 |
*prijsindicatie
- RS-stocknr.:
- 226-6046
- Fabrikantnummer:
- 6EDL04N06PTXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Output Current | 165mA | |
| Pin Count | 28 | |
| Fall Time | 45ns | |
| Package Type | DSO | |
| Driver Type | MOSFET | |
| Number of Outputs | 6 | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 17.5V | |
| Number of Drivers | 6 | |
| Maximum Supply Voltage | 17.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 105°C | |
| Length | 18.1mm | |
| Height | 2.65mm | |
| Series | 6EDL04N06PT | |
| Width | 7.6 mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Output Current 165mA | ||
Pin Count 28 | ||
Fall Time 45ns | ||
Package Type DSO | ||
Driver Type MOSFET | ||
Number of Outputs 6 | ||
Rise Time 60ns | ||
Minimum Supply Voltage 17.5V | ||
Number of Drivers 6 | ||
Maximum Supply Voltage 17.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 105°C | ||
Length 18.1mm | ||
Height 2.65mm | ||
Series 6EDL04N06PT | ||
Width 7.6 mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 6ED family is a full bridge driver to control power device like MOS-transistors or IGBTs in 3-phase system with a maximum blocking voltage of +600 V.It based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic Thyristor structure are present in the device. Hence, no parasitic latch-up may occur at all temperature and voltage conditions. It has signal interlocking of every phase to prevent cross conduction.
Maximum blocking voltage +600 V
Output source/sink current +0.165 A/-0.375 A
Integrated ultra-fast, low RDS(ON) bootstrap diode
Insensitivity of the bridge output to negative
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