Infineon 6EDL04I065PTXUMA1 High Side Gate Driver 6, 165 mA 28-Pin 17.5 V, PG-DSO-28
- RS-stocknr.:
- 351-981
- Fabrikantnummer:
- 6EDL04I065PTXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,95
(excl. BTW)
€ 7,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,975 | € 5,95 |
| 20 - 198 | € 2,685 | € 5,37 |
| 200 - 998 | € 2,47 | € 4,94 |
| 1000 - 1998 | € 2,29 | € 4,58 |
| 2000 + | € 2,06 | € 4,12 |
*prijsindicatie
- RS-stocknr.:
- 351-981
- Fabrikantnummer:
- 6EDL04I065PTXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 165mA | |
| Pin Count | 28 | |
| Package Type | PG-DSO-28 | |
| Fall Time | 26ns | |
| Number of Outputs | 6 | |
| Driver Type | High Side | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 13V | |
| Number of Drivers | 6 | |
| Maximum Supply Voltage | 17.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | 6EDL04 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 165mA | ||
Pin Count 28 | ||
Package Type PG-DSO-28 | ||
Fall Time 26ns | ||
Number of Outputs 6 | ||
Driver Type High Side | ||
Rise Time 60ns | ||
Minimum Supply Voltage 13V | ||
Number of Drivers 6 | ||
Maximum Supply Voltage 17.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series 6EDL04 | ||
Automotive Standard No | ||
The Infineon Three-phase gate driver 2nd generation is a full bridge driver to control power devices like IGBTs in 3-phase systems with a maximum blocking voltage. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions
Higher efficiency
Increased reliability
Easy of design
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