MPS MPQ1918GQE-AEC1-P, High and Low Side 1, 5 A, 5.5V 14-Pin, FCQFN-14
- RS-stocknr.:
- 337-870
- Fabrikantnummer:
- MPQ1918GQE-AEC1-P
- Fabrikant:
- MPS
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 337-870
- Fabrikantnummer:
- MPQ1918GQE-AEC1-P
- Fabrikant:
- MPS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | MPS | |
| Logic Type | TTL | |
| Output Current | 5 A | |
| Supply Voltage | 5.5V | |
| Pin Count | 14 | |
| Package Type | FCQFN-14 | |
| Fall Time | 3ns | |
| Driver Type | High and Low Side | |
| Number of Drivers | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk MPS | ||
Logic Type TTL | ||
Output Current 5 A | ||
Supply Voltage 5.5V | ||
Pin Count 14 | ||
Package Type FCQFN-14 | ||
Fall Time 3ns | ||
Driver Type High and Low Side | ||
Number of Drivers 1 | ||
- Land van herkomst:
- CN
The MPS International Ltd 100V High Frequency Half Bridge GaN/MOSFET Driver is designed to drive enhancement mode Gallium Nitride FETs or N channel MOSFETs with a low gate threshold voltage in a half bridge or synchronous application. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage, which prevents the gate voltage from exceeding the GaN FETs maximum gate to source voltage rating.
Internal bootstrap switch supply voltage clamping
3.7V to 5.5V VCC voltage range
Fast propagation times
Excellent propagation delay matching
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