STMicroelectronics L6385ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17 V, SO-8
- RS-stocknr.:
- 152-011
- Fabrikantnummer:
- L6385ED013TR
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 2500 eenheden)*
€ 2.105,00
(excl. BTW)
€ 2.547,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,842 | € 2.105,00 |
*prijsindicatie
- RS-stocknr.:
- 152-011
- Fabrikantnummer:
- L6385ED013TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Package Type | SO-8 | |
| Fall Time | 30ns | |
| Driver Type | High Side | |
| Number of Outputs | 2 | |
| Rise Time | 50ns | |
| Minimum Supply Voltage | 17V | |
| Maximum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | L6385ED013TR | |
| Mount Type | Surface | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Package Type SO-8 | ||
Fall Time 30ns | ||
Driver Type High Side | ||
Number of Outputs 2 | ||
Rise Time 50ns | ||
Minimum Supply Voltage 17V | ||
Maximum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series L6385ED013TR | ||
Mount Type Surface | ||
- Land van herkomst:
- CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half bridge configurations.
Undervoltage lockout on lower and upper driving section
Internal bootstrap diode
Outputs in phase with inputs
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