STMicroelectronics L6388ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17 V, SO-8
- RS-stocknr.:
- 152-017
- Fabrikantnummer:
- L6388ED013TR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 7,48
(incl. BTW)
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,236 | € 6,18 |
| 50 - 95 | € 1,202 | € 6,01 |
| 100 - 495 | € 1,172 | € 5,86 |
| 500 - 995 | € 1,148 | € 5,74 |
| 1000 + | € 1,136 | € 5,68 |
*prijsindicatie
- RS-stocknr.:
- 152-017
- Fabrikantnummer:
- L6388ED013TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Package Type | SO-8 | |
| Fall Time | 40ns | |
| Driver Type | High Side | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -45°C | |
| Maximum Operating Temperature | 150°C | |
| Series | L6388ED013TR | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Surface | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Package Type SO-8 | ||
Fall Time 40ns | ||
Driver Type High Side | ||
Rise Time 70ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -45°C | ||
Maximum Operating Temperature 150°C | ||
Series L6388ED013TR | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Surface | ||
- Land van herkomst:
- CN
The STMicroelectronics high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the dead time function.
Internal bootstrap diode
Outputs in phase with inputs
Dead time and interlocking function
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