Infineon 256 kB FRAM 28-Pin SOIC-28, FM18W08-SGTR
- RS-stocknr.:
- 273-5303
- Fabrikantnummer:
- FM18W08-SGTR
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 9.619,00
(excl. BTW)
€ 11.639,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 9,619 | € 9.619,00 |
*prijsindicatie
- RS-stocknr.:
- 273-5303
- Fabrikantnummer:
- FM18W08-SGTR
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32k x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mount Type | Surface | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | No | |
| Number of Words | 32k | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Supply Voltage | 2.7V | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32k x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mount Type Surface | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard No | ||
Number of Words 32k | ||
Maximum Supply Voltage 5.5V | ||
Minimum Supply Voltage 2.7V | ||
The Infineon FRAM Memory is a 32 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
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