Infineon 256 kB Parallel FRAM 28-Pin SOIC

Bulkkorting beschikbaar

Subtotaal (1 tube van 27 eenheden)*

€ 269,244

(excl. BTW)

€ 325,782

(incl. BTW)

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  • Plus verzending 108 stuk(s) vanaf 09 februari 2026
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Aantal stuks
Per stuk
Per tube*
27 - 27€ 9,972€ 269,24
54 - 81€ 9,842€ 265,73
108 - 243€ 9,075€ 245,03
270 - 486€ 8,842€ 238,73
513 +€ 8,621€ 232,77

*prijsindicatie

RS-stocknr.:
188-5394
Fabrikantnummer:
FM18W08-SG
Fabrikant:
Infineon
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Merk

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

SOIC

Pin Count

28

Width

7.62 mm

Standards/Approvals

No

Height

2.37mm

Length

18.11mm

Maximum Operating Temperature

85°C

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

5.5V

Land van herkomst:
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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