Infineon BFP842ESDH6327XTSA1 Bipolar Transistor, 40 mA NPN, 3.7 V, 4-Pin SOT-343
- RS-stocknr.:
- 273-2849
- Fabrikantnummer:
- BFP842ESDH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 612,00
(excl. BTW)
€ 741,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 3.000 stuk(s) vanaf 29 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,204 | € 612,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2849
- Fabrikantnummer:
- BFP842ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.7V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 57GHz | |
| Maximum Power Dissipation Pd | 120mW | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.7V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 57GHz | ||
Maximum Power Dissipation Pd 120mW | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
The Infineon high performance RF heterojunction bipolar transistor with an integrated ESD protection suitable for 2.3 to 3.5 GHz LNA applications.
Suitable for low voltage applications
It has application in wireless communications like WLAN, WiMAX and Bluetooth
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