Infineon BFP182WH6327XTSA1 Bipolar Transistor, 35 mA, 12 V, 4-Pin SOT-343
- RS-stocknr.:
- 273-2848
- Fabrikantnummer:
- BFP182WH6327XTSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 273-2848
- Fabrikantnummer:
- BFP182WH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-343 | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Transition Frequency ft | 8GHz | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-343 | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Transition Frequency ft 8GHz | ||
Minimum Operating Temperature -55°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
The Infineon NPN silicon RF transistor for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 m.
Pb free package
It has application in wireless communications
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