onsemi Digital Transistor, -80 V PNP Surface, 2-Pin
- RS-stocknr.:
- 186-7426
- Fabrikantnummer:
- NJVMJD45H11G
- Fabrikant:
- onsemi
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 186-7426
- Fabrikantnummer:
- NJVMJD45H11G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Power Dissipation Pd | 20W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Series | NJVMJD45H11 | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.25mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Power Dissipation Pd 20W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Series NJVMJD45H11 | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.25mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- VN
The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These Devices are Pb-Free
Gerelateerde Links
- onsemi NJVMJD45H11G Digital Transistor, -80 V PNP Surface, 2-Pin
- onsemi Digital Transistor, -80 V PNP Surface, 2-Pin
- onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- onsemi Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- onsemi Digital Transistor, -300 V PNP Surface, 3-Pin
- onsemi MSB92ASWT1G Digital Transistor, -300 V PNP Surface, 3-Pin
- onsemi Digital Transistor, -50 V PNP Surface SOT-23, 3-Pin
