onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- RS-stocknr.:
- 186-7406
- Fabrikantnummer:
- MJB45H11T4G
- Fabrikant:
- onsemi
Subtotaal (800 eenheden, op een rol van 800)*
€ 435,20
(excl. BTW)
€ 526,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 0,544 | € 435,20 |
*prijsindicatie
- RS-stocknr.:
- 186-7406
- Fabrikantnummer:
- MJB45H11T4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 2 | |
| Height | 4.83mm | |
| Width | 15.88mm | |
| Standards/Approvals | No | |
| Length | 10.29mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 2 | ||
Height 4.83mm | ||
Width 15.88mm | ||
Standards/Approvals No | ||
Length 10.29mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
Gerelateerde Links
- onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- onsemi Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- onsemi Digital Transistor, -300 V PNP Surface, 3-Pin
- onsemi MSB92ASWT1G Digital Transistor, -300 V PNP Surface, 3-Pin
- onsemi Digital Transistor, 80 V dc NPN Surface, 2-Pin
- onsemi Digital Transistor, 80 V dc NPN Surface, 3-Pin
- onsemi MJD44H11RLG Digital Transistor, 80 V dc NPN Surface, 2-Pin