onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS-stocknr.:
- 184-4959
- Fabrikantnummer:
- MJB44H11G
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 100 meer toe om € 23,60 te besparen
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€ 9,32
(excl. BTW)
€ 11,28
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 30 stuk(s) vanaf 10 november 2026
- Plus verzending 150 stuk(s) vanaf 24 maart 2027
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 10 - 90 | € 0,932 | € 9,32 | - |
| 100 - 240 | € 0,696 | € 6,96 | € 23,60 |
| 250 - 490 | € 0,688 | € 6,88 | € 61,00 |
| 500 - 990 | € 0,589 | € 5,89 | € 171,50 |
| 1000 + | € 0,556 | € 5,56 | € 376,00 |
*prijsindicatie
- RS-stocknr.:
- 184-4959
- Fabrikantnummer:
- MJB44H11G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum DC Current Gain hFE | 60 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 10.29mm | |
| Height | 4.83mm | |
| Length | 11.05mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Power Dissipation Pd 50W | ||
Minimum DC Current Gain hFE 60 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 10.29mm | ||
Height 4.83mm | ||
Length 11.05mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
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