onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS-stocknr.:
- 184-4309
- Fabrikantnummer:
- MJB44H11G
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 250 meer toe om € 36,75 te besparen
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 44,25
(excl. BTW)
€ 53,55
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 150 stuk(s) vanaf 24 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* | Bespaar |
|---|---|---|---|
| 50 - 200 | € 0,885 | € 44,25 | - |
| 250 - 450 | € 0,738 | € 36,90 | € 36,75 |
| 500 + | € 0,72 | € 36,00 | € 82,50 |
*prijsindicatie
- RS-stocknr.:
- 184-4309
- Fabrikantnummer:
- MJB44H11G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Width | 10.29mm | |
| Height | 4.83mm | |
| Length | 11.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Width 10.29mm | ||
Height 4.83mm | ||
Length 11.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
Gerelateerde Links
- onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- STMicroelectronics Bipolar Transistor, 20 A NPN, 80 V, 3-Pin TO-263
- STMicroelectronics MJB44H11T4-A Bipolar Transistor, 20 A NPN, 80 V, 3-Pin TO-263
- onsemi 2N3772G Transistor, 20 A NPN, 80 V, 2-Pin TO-204AA
- onsemi Transistor, 6 A NPN, 100 V dc, 3-Pin TO-263
- onsemi NJVMJB41CT4G Transistor, 6 A NPN, 100 V dc, 3-Pin TO-263
- onsemi MJB41CG Transistor, 6 A NPN, 100 V dc, 3-Pin TO-263
- onsemi Transistor, 50 A NPN, 80 V, 2-Pin TO-204