onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS-stocknr.:
- 184-4894
- Fabrikantnummer:
- MJE200G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 18,60
(excl. BTW)
€ 22,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 50 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 725 stuk(s) vanaf 21 oktober 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,744 | € 18,60 |
| 100 - 225 | € 0,641 | € 16,03 |
| 250 + | € 0,556 | € 13,90 |
*prijsindicatie
- RS-stocknr.:
- 184-4894
- Fabrikantnummer:
- MJE200G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 15W | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Minimum DC Current Gain hFE | 10 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.25mm | |
| Standards/Approvals | No | |
| Height | 27.1mm | |
| Series | MJE200 | |
| Length | 8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 15W | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Minimum DC Current Gain hFE 10 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 3.25mm | ||
Standards/Approvals No | ||
Height 27.1mm | ||
Series MJE200 | ||
Length 8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
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