onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS-stocknr.:
- 184-4894
- Fabrikantnummer:
- MJE200G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 18,60
(excl. BTW)
€ 22,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 07 november 2026
- Plus verzending 725 stuk(s) vanaf 13 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,744 | € 18,60 |
| 100 - 225 | € 0,641 | € 16,03 |
| 250 + | € 0,556 | € 13,90 |
*prijsindicatie
- RS-stocknr.:
- 184-4894
- Fabrikantnummer:
- MJE200G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 15W | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | MJE200 | |
| Length | 8mm | |
| Height | 27.1mm | |
| Width | 3.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 15W | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series MJE200 | ||
Length 8mm | ||
Height 27.1mm | ||
Width 3.25mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
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