onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS-stocknr.:
- 184-4314
- Fabrikantnummer:
- MJE200G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 doos van 500 eenheden)*
€ 191,00
(excl. BTW)
€ 231,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Doos* |
|---|---|---|
| 500 - 500 | € 0,382 | € 191,00 |
| 1000 - 2000 | € 0,312 | € 156,00 |
| 2500 - 9500 | € 0,31 | € 155,00 |
| 10000 + | € 0,308 | € 154,00 |
*prijsindicatie
- RS-stocknr.:
- 184-4314
- Fabrikantnummer:
- MJE200G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Maximum Power Dissipation Pd | 15W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Series | MJE200 | |
| Width | 3.25mm | |
| Standards/Approvals | No | |
| Height | 27.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Maximum Power Dissipation Pd 15W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Series MJE200 | ||
Width 3.25mm | ||
Standards/Approvals No | ||
Height 27.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Gerelateerde Links
- onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- onsemi Transistor, 1.5 A NPN, 60 V, 3-Pin TO-225
- onsemi Transistor, 1.5 A NPN, 45 V, 3-Pin TO-225
- onsemi Transistor, 1 A NPN, 80 V, 3-Pin TO-225
- onsemi BD139G Bipolar Transistor, 1.5 A NPN, 80 V, 3-Pin TO-225
- onsemi BD135G Transistor, 1.5 A NPN, 45 V, 3-Pin TO-225
- onsemi 2N4923G Transistor, 1 A NPN, 80 V, 3-Pin TO-225
- onsemi MJE340G Transistor, 500 mA NPN, 300 V, 3-Pin TO-225