Fabrikantnummer

STMicroelectronics HSP051-4M5 4-Element Uni-Directional TVS Diode, 5-Pin DFN

RS-stocknr.:: 192-4287
Fabrikantnummer:: HSP051-4M5
Fabrikant:: STMicroelectronics

STMicroelectronics HSP051-4M5 4-Element Uni-Directional TVS Diode, 5-Pin DFN

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 192-4287
Fabrikantnummer:: HSP051-4M5
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Product Type	TVS Diode
	Direction Type	Uni-Directional
	Diode Configuration	Array
	Minimum Breakdown Voltage Vbr	5.7V
	Mount Type	Surface
	Package Type	DFN
	Maximum Reverse Stand-off Voltage Vwm	5V
	Pin Count	5
	ESD Protection	Yes
	Minimum Operating Temperature	-40°C
	Maximum Peak Pulse Current Ippm	3A
	Clamping Voltage VC	13.7V
	Maximum Operating Temperature	150°C
	Number of Elements per Chip	4
	Length	1.4mm
	Height	0.35mm
	Width	0.9mm
	Standards/Approvals	No
	Automotive Standard	No
	Maximum Reverse Leakage Current	70nA

	Alles selecteren
	Merk STMicroelectronics
	Product Type TVS Diode
	Direction Type Uni-Directional
	Diode Configuration Array
	Minimum Breakdown Voltage Vbr 5.7V
	Mount Type Surface
	Package Type DFN
	Maximum Reverse Stand-off Voltage Vwm 5V
	Pin Count 5
	ESD Protection Yes
	Minimum Operating Temperature -40°C
	Maximum Peak Pulse Current Ippm 3A
	Clamping Voltage VC 13.7V
	Maximum Operating Temperature 150°C
	Number of Elements per Chip 4
	Length 1.4mm
	Height 0.35mm
	Width 0.9mm
	Standards/Approvals No
	Automotive Standard No
	Maximum Reverse Leakage Current 70nA

Land van herkomst:: CN

The HSP051-4M5 is a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. The device is packaged in μQFN 1.3 mm x 0.8 mm with a 500 μm pitch.

Very compact 500 μm pitch package, for easy PCB layout

Very-large bandwidth: 11.5 GHz

Very-low capacitance: 0.2 pF (I/O to I/O) and 0.35 pF (I/O to GND)

Very low dynamic resistance : 0.35 Ω

Low leakage current: < 1 nA

High ESD protection level

High integration

Suitable for high density boards

Extended operating junction temperature range : -40 °C to 150 °C

±20 kV (contact discharge)

±30 kV (air discharge)

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