Infineon SRAM, CY7C1021D-10VXI- 1 MB
- RS-stocknr.:
- 194-8911
- Fabrikantnummer:
- CY7C1021D-10VXI
- Fabrikant:
- Infineon
Subtotaal (1 tube van 17 eenheden)*
€ 51,612
(excl. BTW)
€ 62,458
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 17 + | € 3,036 | € 51,61 |
*prijsindicatie
- RS-stocknr.:
- 194-8911
- Fabrikantnummer:
- CY7C1021D-10VXI
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 1MB | |
| Product Type | SRAM | |
| Organisation | 64K x 16 bit | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 10ns | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 5V | |
| Maximum Supply Voltage | 3.6V | |
| Mount Type | Through Hole | |
| Package Type | SOJ | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 44 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Width | 10.29 mm | |
| Height | 3.05mm | |
| Length | 28.7mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 1MB | ||
Product Type SRAM | ||
Organisation 64K x 16 bit | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 10ns | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 5V | ||
Maximum Supply Voltage 3.6V | ||
Mount Type Through Hole | ||
Package Type SOJ | ||
Minimum Operating Temperature -40°C | ||
Pin Count 44 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Width 10.29 mm | ||
Height 3.05mm | ||
Length 28.7mm | ||
This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.