Infineon SRAM Memory Chip, CY7C1049GN-10VXI- 4Mbit

Bekijk alle SRAM

Subtotaal (1 tube van 19 eenheden)*

€ 120,099

(excl. BTW)

€ 145,312

(incl. BTW)

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  • Verzending vanaf 27 maart 2026
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Aantal stuks
Per stuk
Per tube*
19 +€ 6,321€ 120,10

*prijsindicatie

RS-stocknr.:
182-3295
Fabrikantnummer:
CY7C1049GN-10VXI
Fabrikant:
Infineon
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Merk

Infineon

Memory Size

4Mbit

Organisation

512k x 16 bit

Number of Words

512k

Number of Bits per Word

8bit

Maximum Random Access Time

10ns

Clock Frequency

100MHz

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

SOJ

Pin Count

36

Dimensions

0.93 x 0.4 x 0.12mm

Maximum Operating Supply Voltage

5.5 V

Height

0.12mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

4.5 V

Length

0.93mm

Minimum Operating Temperature

-40 °C

Width

0.4mm

Land van herkomst:
US
CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: The device is deselected (CE HIGH) The control signal OE is de-asserted.

High speed
tAA = 10 ns
Low active and standby currents
Active current: ICC = 38 mA typical
Standby current: ISB2 = 6 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
TTL-compatible inputs and outputs
Pb-free 36-pin SOJ and 44-pin TSOP II packages

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