Infineon IDK12G65C5XTMA2

The Infineon SiC Schottky Diode is a silicon carbide schottky barrier diode. The ThinQ Generation 5 represents Infineon leading edge technology for the SiC schottky barrier diode. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit.

RoHS compliant
Pb free lead plating
High surge current capability
Benchmark switching behaviour
Optimized for high temperature operation
Temperature independent switching behaviour