Infineon 650 V 12 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220
- RS-stocknr.:
- 273-2744
- Fabrikantnummer:
- IDK12G65C5XTMA2
- Fabrikant:
- Infineon
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€ 4,36
(excl. BTW)
€ 5,28
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 75 stuk(s) vanaf 03 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 49 | € 4,36 |
| 50 - 99 | € 4,00 |
| 100 - 249 | € 3,62 |
| 250 - 499 | € 3,35 |
| 500 + | € 3,13 |
*prijsindicatie
- RS-stocknr.:
- 273-2744
- Fabrikantnummer:
- IDK12G65C5XTMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 190μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Reverse Current Ir 190μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC Schottky Diode is a silicon carbide schottky barrier diode. The ThinQ Generation 5 represents Infineon leading edge technology for the SiC schottky barrier diode. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit.
RoHS compliant
Pb free lead plating
High surge current capability
Benchmark switching behaviour
Optimized for high temperature operation
Temperature independent switching behaviour
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