Infineon 1200 V 5 A Diode PG-TO-220
- RS-stocknr.:
- 259-1515
- Fabrikantnummer:
- IDH05G120C5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 87,00
(excl. BTW)
€ 105,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 500 stuk(s) vanaf 21 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,74 | € 87,00 |
| 100 - 200 | € 1,531 | € 76,55 |
| 250 + | € 1,444 | € 72,20 |
*prijsindicatie
- RS-stocknr.:
- 259-1515
- Fabrikantnummer:
- IDH05G120C5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | PG-TO-220 | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH05G120C5 | |
| Peak Reverse Current Ir | 175μA | |
| Maximum Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 59A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type PG-TO-220 | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH05G120C5 | ||
Peak Reverse Current Ir 175μA | ||
Maximum Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 59A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diode presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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