Wolfspeed 1.2 kV 56 A Rectifier & Schottky Diode 2-Pin D2PAK
- RS-stocknr.:
- 248-8952P
- Fabrikantnummer:
- E4D20120G
- Fabrikant:
- Wolfspeed
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 248-8952P
- Fabrikantnummer:
- E4D20120G
- Fabrikant:
- Wolfspeed
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Wolfspeed | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-263-3 | |
| Maximum Continuous Forward Current If | 56A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | E | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 35μA | |
| Maximum Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Standards/Approvals | RoHS | |
| Length | 15.75mm | |
| Width | 10.28mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Wolfspeed | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-263-3 | ||
Maximum Continuous Forward Current If 56A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series E | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 35μA | ||
Maximum Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Standards/Approvals RoHS | ||
Length 15.75mm | ||
Width 10.28mm | ||
Automotive Standard AEC-Q101 | ||
The Wolfspeed Silicon Carbide Schottky Diode comes under E-Series Automotive . The Wolfspeed’s 1200V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.
4th Generation SiC Merged PIN Schottky Technology
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behaviour
AEC-Q101 Qualified and PPAP Capable
Humidity Resistant
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