STMicroelectronics 1200 V 20 A Diode 2-Pin D2PAK STPSC20H12G-TR
- RS-stocknr.:
- 201-0893
- Fabrikantnummer:
- STPSC20H12G-TR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,56
(excl. BTW)
€ 10,36
(incl. BTW)
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- Verzending vanaf 20 augustus 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 8,56 |
| 5 - 9 | € 8,04 |
| 10 - 24 | € 7,62 |
| 25 - 49 | € 7,34 |
| 50 + | € 7,16 |
*prijsindicatie
- RS-stocknr.:
- 201-0893
- Fabrikantnummer:
- STPSC20H12G-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 60μA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.3mm | |
| Standards/Approvals | RoHS | |
| Length | 15.95mm | |
| Width | 10.58 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 60μA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Maximum Operating Temperature 175°C | ||
Height 4.3mm | ||
Standards/Approvals RoHS | ||
Length 15.95mm | ||
Width 10.58 mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Low VF
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