STMicroelectronics 650 V 12 A Diode 2-Pin TO-220
- RS-stocknr.:
- 201-0889P
- Fabrikantnummer:
- STPSC12065D
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 93,95
(excl. BTW)
€ 113,675
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 40 stuk(s) vanaf 04 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 25 - 45 | € 3,758 |
| 50 - 120 | € 3,562 |
| 125 - 245 | € 3,358 |
| 250 + | € 3,196 |
*prijsindicatie
- RS-stocknr.:
- 201-0889P
- Fabrikantnummer:
- STPSC12065D
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC12065 | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 50μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.95mm | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC12065 | ||
Pin Count 2 | ||
Peak Reverse Current Ir 50μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.95mm | ||
Height 4.3mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
High forward surge capability
Operating Tj from -40 °C to 175 °C