STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK STPSC4H065B-TR
- RS-stocknr.:
- 201-0882
- Fabrikantnummer:
- STPSC4H065B-TR
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 100 meer toe om € 49,20 te besparen
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€ 15,48
(excl. BTW)
€ 18,73
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 16 april 2027
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 10 - 90 | € 1,548 | € 15,48 | - |
| 100 - 490 | € 1,056 | € 10,56 | € 49,20 |
| 500 - 990 | € 0,966 | € 9,66 | € 291,00 |
| 1000 - 2490 | € 0,954 | € 9,54 | € 594,00 |
| 2500 + | € 0,943 | € 9,43 | € 1.512,50 |
*prijsindicatie
- RS-stocknr.:
- 201-0882
- Fabrikantnummer:
- STPSC4H065B-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | D2PAK | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 35μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.25mm | |
| Width | 10mm | |
| Diameter | 3.75mm | |
| Standards/Approvals | No | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type D2PAK | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 35μA | ||
Maximum Operating Temperature 175°C | ||
Length 28.25mm | ||
Width 10mm | ||
Diameter 3.75mm | ||
Standards/Approvals No | ||
Height 4.5mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product
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